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Preliminary Technical Information
Power MOSFET with
Extended FBSOA
N-Channel Enhancement Mode
IXTH30N50L
IXTQ30N50L
IXTT30N50L
D
O
DD
V DSS
I D25
R DS(on)
= 500V
= 30A
≤ 0.20 Ω
TO-247 (IXTH)
G
O
R Gi
w w
O
S
(TAB)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
500
500
± 20
± 30
V
V
V
V
TO-3P (IXTQ)
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
30
60
A
A
G
D
S
(TAB)
I AR
T C = 25 ° C
30
A
E AR
E AS
P D
T C = 25 ° C
T C = 25 ° C
50
1.5
400
mJ
J
W
TO-268 (IXTT)
T J
T JM
-55 to +150
+150
° C
° C
G
S
(TAB)
T stg
-55 to +150
° C
T L
T SOLD
M d
Weight
1.6mm (0.063in) from case for 10s
Plastic body for 10s
Mounting torque (TO-247, TO-3P)
TO-247
TO-3P
TO-268
300
260
1.13/10
6.0
5.5
5.0
° C
° C
Nm/lb.in.
g
g
g
G = Gate D = Drain
S = Source TAB = Drain
Features
Designed for linear operation
International standard packages
Unclamped Inductive Switching
Symbol
Test Conditions
Characteristic Values
(UIS) rated.
Molding epoxies meet UL 94 V-0
(T J = 25 ° C, unless otherwise specified)
Min.
Typ.
Max.
flammability classification
Integrated gate resistor for easy
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 30V, V DS = 0V
V DS = V DSS
V GS = 0V T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
500
2.5
4.5
± 100
50
300
0.20
V
V
nA
μ A
μ A
Ω
paralleling
Guaranteed FBSOA at 75 ° C
Applications
Solid state circuit breakers
Soft start controls
Linear amplifiers
Programmable loads
Current regulators
? 2007 IXYS CORPORATION, All rights reserved
DS99786(10/07)
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相关代理商/技术参数
IXTT30N50L2 功能描述:MOSFET LINEAR L2 SERIES MOSFET 500V 30A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT30N50P 功能描述:MOSFET 30.0 Amps 500 V 0.2 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT30N60L2 功能描述:MOSFET 30 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT30N60P 功能描述:MOSFET 30.0 Amps 600 V 0.24 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT360N055T2 功能描述:MOSFET 360Amps 55V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT36N50P 功能描述:MOSFET 36.0 Amps 500 V 0.17 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT36P10 功能描述:MOSFET -36 Amps -100V 0.075 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT40N50L2 功能描述:MOSFET 40 Amps 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube